一代大盐商个园主人黄至筠盐业经营之道

黄至筠(1770—1883),字韵芬,又字个园,亦称应泰、潆泰,为扬州八大商总之一。他祖籍浙江,因在两淮经营盐业成巨富,遂著籍于扬州甘泉县。经商致富后在扬州建有一所园林别业——个园,是目前扬州保存最完好的一所盐商私家园林。他在两淮担任总商长达40余年,有其独特的经营之道。     

辉光放电质谱仪测定超纯锗中23种痕量杂质元素

本文报导了一种用辉光放电质谱仪VG9000在无标准样品的情况下对超纯半导体材料锗中23种痕量杂质元素的直接而快速的定量测定方法。该方法具有10ppt量级的检测极限，是鉴定起统金属或半导体材料纯度（8N）的理想手段。     

Positive Effect of Ge Vacancies on Facilitating Band Convergence and Suppressing Bipolar Transport in GeTe‐Based Alloys for High Thermoelectric Performance

Because the intrinsic Ge vacancies in GeTe usually lead to high hole concentration beyond the optimal range, many previous studies tend to consider Ge vacancies as negative effects on increasing the figure of merit ZT of GeTe‐based alloys, and consequently have proposed various approaches to suppress Ge vacancies. However, in this work, it is demonstrated that the Ge vacancies can have great positive effects on enhancing the ZT of GeTe‐based alloys when the hole concentration falls into the optimal range. First, hole concentration of GeTe is reduced close to the optimal range by co‐alloying of Pb and Bi, and then the Ge vacancies are increased by adding excess Te into the Ge_0.8Pb_0.1Bi_0.1Te_1+x. The Ge vacancies can cause lattice shrinkage and promote rhombohedral‐to‐cubic phase transition. As revealed by first‐principle calculations, theoretical simulations, and experimental tests, Ge vacancies can facilitate the band convergence, suppress the bipolar transport at higher temperature range, and reduce the lattice thermal conductivity. Combining these effects, a peak ZT of 1.92 at 637 K and an average ZT of 1.34 within 300–773 K in Ge_0.8Pb_0.1Bi_0.1Te_1.06 can be obtained, demonstrating the great significance of utilizing vacancy‐type defects for enhancing ZT.     

The Effect of the Addition of Re and Ge on the Properties of Pt/Al2O3

The effect of Re and Ge addition to Pt/Al₂O₃ was studied. Mono-, bi- and a trimetallic catalysts were prepared and characterized by TPR, XPS, TPO and by the n-pentane, cyclohexane (CH) and n-octane reactions. It was found that the trimetallic was the most active and stable catalyst and showed selectivities to aromatics and isomers very similar to the bimetallic germanium-based catalyst.     

摭谈《资治通鉴》“臣光曰”对学生管理工作的启示

创建一个良好的竞争秩序、一个优秀的团队、一个有信用的声誉,并且因材施教,赏罚结合,有助于激励学生健康成长,搞好学生管理工作。《资治通鉴》中"臣光曰"中具有激励价值的部分对学生管理工作的意义。     

小议量词“个”的表达功用

"个"从称量具体事物到称量抽象事物,其适用范围不断扩展,不同的表达功用也随之衍生。本文分析了"个"的不同表达功用,并指出,"个"的不同表达功用是在"一个"义的基础上产生的,不同的语境下,"个"的表达功用并不相同。     

曹植诗文与《诗经》

曹植诗文深受《诗经》影响,其中有很多借鉴于《诗经》的句子,或者直接摘引原句,或者化用诗句,或者运用篇名取其篇旨义。这些既说明了《诗经》对曹植的诗文创作有着及其重要的影响,而且也说明了在魏晋南北朝时代,经学与文学出现了频繁的互动。     

Molten core fabrication of bismuth germanium oxide Bi4Ge3O12 crystalline core fibers

Optical fibers possessing a crystalline oxide core have significant potential for novel and useful electro‐ or nonlinear‐optic waveguides. Presently, however, their utility suffers from the slow speed and limited cladding materials afforded by conventional crystal‐fiber‐growth techniques. Described herein is the development of single phase bismuth germanium oxide crystalline core fibers using conventional glass fiber drawing. More specifically, fibers were fabricated and evaluated based on 2 embodiments of the molten core method. In a first approach, a Bi₄Ge₃O₁₂ single crystal was employed as the precursor and sleeved inside a borosilicate glass cladding. In the second approach, additional Bi₂O₃ was included along with the Bi₄Ge₃O₁₂ precursor single crystal. Glass clad fibers drawn from the precursor Bi₄Ge₃O₁₂ single crystal resulted in a polycrystalline core with various crystal morphologies (line‐like, dendrite‐like, and uniform grains) as will be discussed, while fibers drawn from the Bi₄Ge₃O₁₂ single crystal surrounded by Bi₂O₃ resulted in a more homogeneous microstructure. The eulytine crystal structure was crystallized using both approaches, with the formation of a secondary crystal phase using the second approach. More particularly, this work aims at showing that single phase and phase pure crystalline oxide core optical fibers can be achieved using conventional glass fiber draw processes, although further optimization is necessary for obtaining single crystalline core fibers.     

Influence of Ge and GeO2 on the microstructure and varistor properties of TiO2–Ta2O5–CaCO3 ceramics

This study investigated the effect of elemental crystal Ge or/and GeO₂ doping on the microstructure and varistor properties of TiO₂–Ta₂O₅–CaCO₃ varistor ceramics, which were prepared via the traditional ball milling–molding–sintering process. X-ray diffraction, scanning electron microscopy, scanning transmission electron microscopy-energy dispersive X-ray spectroscopy, scanning electron microscopy-energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy demonstrated that co-doping with Ge and GeO₂ changed the microstructure of TiO₂–Ta₂O₅–CaCO₃ ceramics, thereby increasing the nonlinear coefficient and decreasing the breakdown voltage. The optimum doping concentrations of Ta₂O₅, CaCO₃, Ge, and GeO₂ exhibited the highest nonlinear coefficient (α=14.6), a lower breakdown voltage (E_B=18.7 V mm⁻¹), the least leakage current (J_L=10.5 μA cm⁻²), and the highest grain boundary barrier (Φ_B=1.05 eV). In addition, Ge and GeO₂ function as sintering aids, which reduce the sintering temperature because of their low melting points.     

光纤材料锗缺氧中心与环结构特性研究

利用密度泛函理论(DFT)研究光纤材料中锗缺氧中 心(Ge-DDC)与环 结构特性,建立基于三环结构的Si-O-Si结构模型和Ge-ODC模型;同时,通过紫外可见光 (UV-Vis)吸收与拉曼测试分析研究光纤材料的微结构 特性。理论分析结果表明:对于未掺杂Ge的光纤材料,其带隙为8.36eV左右;而对于掺杂Ge元素的光纤材料,其带隙为 5.0eV左右,会在242nm波长处形成一个吸收 中心,并且它与Ge-ODC缺陷中心的吸收中心相 对应。在Ge-ODC缺陷结构中,其三环 Si-O-Si结构与Ge原子之间存在紧密联系。当掺Ge的光纤材料经辐照处理后,光纤材料中 容易产生GeE′和SiE′缺陷中心。光纤材 料受到不同剂量辐照后,光纤材料中的三环结构数量随着剂量的增加而减少。研究结果表明 ,石英材料中Ge-ODC缺陷结构容易产生 于环结构周围,并容易受到外界能量的影响。Ge-ODC与环结构特性的理论研究,对 超低损耗石英光纤的制备与设计具有重要的实际应用意义。